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| MGP19N35CL, MGB19N35CL Preferred Device Ignition IGBT 19 Amps, 350 Volts N-Channel TO-220 and D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. * Ideal for IGBT-On-Coil or Distributorless Ignition System Applications * High Pulsed Current Capability up to 50 A * Gate-Emitter ESD Protection * Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load * Integrated ESD Diode Protection * Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices * Low Saturation Voltage * Optional Gate Resistor (RG) MAXIMUM RATINGS (-55C TJ 175C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage Gate-Emitter Voltage Collector Current - Continuous @ TC = 25C - Pulsed ESD (Human Body Model) R = 1500 , C = 100 pF ESD (Machine Model) R = 0 , C = 200 pF Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Symbol VCES VCER VGE IC ESD 8.0 ESD PD TJ, Tstg 800 165 1.1 -55 to 175 V Watts W/C C 1 Gate 2 Collector 3 Emitter G19N35CL YWW G19N35CL YWW 1 Gate 3 Emitter 2 Collector Value 380 380 22 19 50 Unit VDC VDC VDC ADC AAC kV 1 2 3 TO-220AB CASE 221A STYLE 9 http://onsemi.com 19 AMPERES 350 VOLTS (Clamped) VCE(on) @ 10 A = 1.8 V Max N-Channel C G RGE 4 E 4 1 2 3 D2PAK CASE 418B STYLE 4 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Collector 4 Collector UNCLAMPED COLLECTOR-TO-EMITTER AVALANCHE CHARACTERISTICS (-55C TJ 175C) Characteristic Single Pulse Collector-to-Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 22.4 A, L = 2.0 mH, Starting TJ = 25C VCC = 50 V, VGE = 5.0 V, Pk IL = 17.4 A, L = 2.0 mH, Starting TJ = 150C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, L = 3.0 mH, Pk IL = 25.8 A, Starting TJ = 25_C Symbol EAS 500 300 EAS(R) mJ 1000 Value Unit mJ G19N35CL = Device Code Y = Year WW = Work Week ORDERING INFORMATION Device MGP19N35CL MGB19N35CLT4 Package TO-220 D2PAK Shipping 50 Units/Rail 800 Tape & Reel Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2005 February, 2005 - Rev. XXX 1 Publication Order Number: MGP19N35CL/D MGP19N35CL, MGB19N35CL THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO-220 D2PAK (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Symbol RJC RJA RJA TL Value 0.9 62.5 50 275 C Unit C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Clamp Voltage BVCES IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current g ICES TJ = -40C to 150C TJ = -40C to 150C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C Reverse Collector-Emitter Clamp Voltage p g BVCES(R) IC = -75 mA 75 A TJ = 25C TJ = 150C TJ = -40C Gate-Emitter Clamp Voltage Gate-Emitter Leakage Current Gate Resistor (Optional) Gate Emitter Resistor BVGES IGES RG RGE IG = 5.0 mA VGE = 10 V - - TJ = -40C to 150C TJ = -40C to 150C TJ = -40C to 150C TJ = -40C to 150C 320 330 - - - - - - 25 25 25 17 384 - 10 350 360 1.5 15 0.7 0.35 10 0.05 33 36 30 20 500 70 20 380 380 20 40* 1.5 1.0 20* 0.5 50 50 50 22 1000 - 26 VDC ADC VDC VCE = 300 V V, VGE = 0 V ADC Reverse Collector-Emitter Leakage Current g IECS mA VCE = -24 V 24 VDC k ON CHARACTERISTICS (Note 2.) g Gate Threshold Voltage VGE(th) IC = 1.0 mA, 10 A VGE = VCE - TJ = 25C TJ = 150C TJ = -40C - 1.4 0.75 1.6 - 1.7 1.1 1.9 4.4 2.0 1.4 2.1* - mV/C VDC Threshold Temperature Coefficient (Negative) - 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 S, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range. http://onsemi.com 2 MGP19N35CL, MGB19N35CL ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit ON CHARACTERISTICS (continued) (Note 3.) g Collector-to-Emitter On-Voltage VCE(on) IC = 6.0 A 6 0 A, VGE = 4.0 V TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = 150C TJ = -40C to 150C 1.0 0.8 1.15 1.2 1.0 1.3 1.5 1.35 1.5 1.7 1.6 1.7 2.0 2.0 2.0 - 8.0 1.25 1.05 1.4 1.5 1.3 1.6 1.75 1.65 1.8 2.0 1.9 2.0 2.25 2.3 2.2 1.3 15 1.6 1.4 1.75* 1.8 1.6 1.9* 2.1 1.95 2.1* 2.3 2.2 2.3* 2.6 2.7* 2.6 1.8 25 VDC Mhos VDC IC = 10 A A, VGE = 4.0 V IC = 15 A A, VGE = 4.0 V IC = 20 A A, VGE = 4.0 V IC = 25 A A, VGE = 4.0 V Collector-to-Emitter On-Voltage Forward Transconductance VCE(on) gfs IC = 10 A, VGE = 4.5 V VCE = 5.0 V, IC = 6.0 A DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance CISS COSS CRSS - VCC = 25 V VGE = 0 V V, f = 1.0 MHz TJ = -40C to 40C t 150 C 150C - - 1500 130 6.0 1800 160 8.0 p pF SWITCHING CHARACTERISTICS (Note 3.) y ( ) Turn-Off Delay Time (Inductive) td(off) tf td(off) tf td(on) tr VCC = 300 V, IC = 10 A RG = 1 0 k L = 300 H 1.0 k, H VCC = 300 V, IC = 10 A RG = 1 0 k L = 300 H 1.0 k, H VCC = 300 V, IC = 6.5 A RG = 1 0 k RL = 46 1.0 k, VCC = 300 V, IC = 6.5 A RG = 1 0 k RL = 46 1.0 k, VCC = 10 V, IC = 6.5 A RG = 1 0 k RL = 1 5 1.0 k, 1.5 VCC = 10 V, IC = 6.5 A RG = 1 0 k RL = 1 5 1.0 k, 1.5 TJ = 25C TJ = 150C TJ = 25C TJ = 150C TJ = 25C TJ = 150C TJ = 25C TJ = 150C TJ = 25C TJ = 150C TJ = 25C TJ = 150C - - - - - - - - - - - - 5.0 6.0 6.0 11 6.0 7.0 12 18 1.5 1.5 4.0 5.0 10 10 10 15* 10 10 20 22* 2.0 2.0 6.0 6.0 Sec Sec Sec Fall Time ( (Inductive) ) Turn-Off Delay Time ( y (Resistive) ) Fall Time ( (Resistive) ) Turn-On Delay Time y Rise Time 3. Pulse Test: Pulse Width v 300 S, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range. http://onsemi.com 3 MGP19N35CL, MGB19N35CL TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) 60 IC, COLLECTOR CURRENT (AMPS) 50 VGE = 5.0 V 40 TJ = 25C 30 20 10 0 VGE = 3.0 V VGE = 2.5 V 0 1 2 3 4 5 6 7 8 VGE = 4.5 V VGE = 3.5 V VGE = 4.0 V IC, COLLECTOR CURRENT (AMPS) VGE = 10.0 V 60 VGE = 10.0 V 50 VGE = 5.0 V 40 TJ = 150C 30 20 10 0 VGE = 3.5 V VGE = 3.0 V VGE = 2.5 V VGE = 4.0 V VGE = 4.5 V 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 2. Output Characteristics 60 IC, COLLECTOR CURRENT (AMPS) 55 50 45 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 TJ = 25C TJ = 150C TJ = -40C 3 3.5 4 4.5 5 VCE = 10 V 3.0 VGE = 5.0 V 2.5 2.0 1.5 1.0 0.5 0.0 -50 IC = 15 A IC = 10 A IC = 20 A IC = 25 A IC = 5 A -25 0 25 50 75 100 125 150 VGE, GATE TO EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 3. Transfer Characteristics Figure 4. Collector-to-Emitter Saturation Voltage vs. Junction Temperature 2.5 THRESHOLD VOLTAGE (VOLTS) 10000 1000 Ciss Mean + 4 2.0 1.5 1.0 Mean IC = 1 mA C, CAPACITANCE (pF) Coss 100 10 1 Crss Mean - 4 0.5 0.0 -50 0 0 20 40 60 80 100 120 140 160 180 -25 0 25 50 75 100 125 150 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) TEMPERATURE (C) Figure 5. Capacitance Variation http://onsemi.com 4 Figure 6. Threshold Voltage vs. Temperature MGP19N35CL, MGB19N35CL 14 12 SWITCHING TIME (S) 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 td(off) VCC = 300 V VGE = 5.0 V RG = 1000 IC = 10 A L = 300 H 14 12 SWITCHING TIME (S) 10 8 6 4 2 0 0 2 4 6 8 10 td(off) VCC = 300 V VGE = 5.0 V RG = 1000 TJ = 150C L = 300 H 12 14 16 IC, COLLECTOR CURRENT (AMPS) tf tf TC, CASE TEMPERATURE (C) Figure 7. Switching Speed vs. Case Temperature Figure 8. Switching Speed vs. Collector Current 30 IL, LATCH CURRENT (AMPS) IL, LATCH CURRENT (AMPS) 25 T = 25C 20 15 T = 150C 10 5 0 VCC = 50 V VGE = 5.0 V RG = 1000 30 25 20 15 10 5 VCC = 50 V VGE = 5.0 V RG = 1000 0 25 50 75 100 125 150 175 L = 3.0 mH L = 6.0 mH L = 2.0 mH 0 2 4 6 8 10 0 -50 -25 INDUCTOR (mH) TEMPERATURE (C) Figure 9. Minimum Open Secondary Latch Current vs. Inductor 30 IL, LATCH CURRENT (AMPS) 25 20 15 10 5 0 T = 150C IL, LATCH CURRENT (AMPS) T = 25C VCC = 50 V VGE = 5.0 V RG = 1000 30 Figure 10. Minimum Open Secondary Latch Current vs. Temperature L = 2.0 mH 25 L = 3.0 mH 20 15 10 5 VCC = 50 V VGE = 5.0 V RG = 1000 0 25 50 75 100 125 150 175 L = 6.0 mH 0 1 2 3 4 5 6 7 8 9 10 0 -50 -25 INDUCTOR (mH) TEMPERATURE (C) Figure 11. Typical Open Secondary Latch vs. Inductor http://onsemi.com 5 Figure 12. Typical Open Secondary Latch vs. Temperature MGP19N35CL, MGB19N35CL 10 R(t), TRANSIENT THERMAL RESISTANCE (C/Watt) Duty Cycle = 0.5 1 0.2 0.1 0.05 0.02 0.01 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 TJ(pk) - TA = P(pk) RJA(t) RJC R(t) for t 0.2 s Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 t,TIME (S) 1 10 100 1000 Figure 13. Transient Thermal Resistance (Non-normalized Junction-to-Ambient mounted on fixture in Figure 14) 1.5 4 4 0.125 4 Figure 14. Test Fixture for Transient Thermal Curve (48 square inches of 1/8, thick aluminum) http://onsemi.com 6 MGP19N35CL, MGB19N35CL 100 COLLECTOR CURRENT (AMPS) DC 10 1 ms 1 100 ms 0.1 10 ms COLLECTOR CURRENT (AMPS) 100 s 100 DC 10 100 s 1 1 ms 10 ms 100 ms 0.1 0.01 1 10 100 1000 0.01 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE (VOLTS) COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) DC 10 t1 = 3 ms D = 0.30 1 P(pk) 0.1 t1 t2 0.01 1 DUTY CYCLE, D = t1/t2 10 100 1000 t1 = 1 ms D = 0.05 t1 = 2 ms D = 0.10 100 Figure 16. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) DC 10 t1 = 3 ms D = 0.30 1 P(pk) 0.1 t1 t2 DUTY CYCLE, D = t1/t2 10 t1 = 1 ms D = 0.05 t1 = 2 ms D = 0.10 0.01 1 100 1000 COLLECTOR-EMITTER VOLTAGE (VOLTS) COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 17. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 18. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) http://onsemi.com 7 MGP19N35CL, MGB19N35CL PACKAGE DIMENSIONS TO-220 THREE-LEAD TO-220AB CASE 221A-09 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 GATE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 -T- B 4 SEATING PLANE F T C S Q 123 A U K H Z L V G D N R J STYLE 9: PIN 1. 2. 3. 4. http://onsemi.com 8 MGP19N35CL, MGB19N35CL PACKAGE DIMENSIONS D2PAK CASE 418B-03 ISSUE D C E -B- 4 V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 GATE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40 1 2 3 S A -T- SEATING PLANE K G D 3 PL 0.13 (0.005) H M J TB M STYLE 4: PIN 1. 2. 3. 4. http://onsemi.com 9 MGP19N35CL, MGB19N35CL Notes http://onsemi.com 10 MGP19N35CL, MGB19N35CL Notes http://onsemi.com 11 MGP19N35CL, MGB19N35CL ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. 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